1 documents found
Registration Number

0112U005082, ( 0217U003083  0217U003084  0217U003085  0217U003086  0217U003087  ) R & D request

Title

Defect formation and kinetic effects in the irradiated and thermally treated semiconductors and nanostructures on their basis.

Head

Гайдар Галина Петрівна,

Registration Date

25-05-2012

Organization

Institute for Nuclear Research of NAS of Ukraine

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2024-12-10

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Defect formation and kinetic effects in the irradiated and thermally treated semiconductors and nanostructures on their basis.
Head: Гайдар Галина Петрівна. Defect formation and kinetic effects in the irradiated and thermally treated semiconductors and nanostructures on their basis.. Institute for Nuclear Research of NAS of Ukraine. № 0112U005082
1 documents found

Updated: 2025-11-07


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