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Registration Number

0214U000982, 0114U001616 , R & D reports

Title

"Development of interferential nanolithography methods for formation of relief-phase structures by using of vacuum photoresists" 5 stage - "Investigation and development of solid-immersion photolithography on the basis of chalcogenide photoresists."

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Head

Indutnyi Ivan, Доктор фізико-математичних наук

Registration Date

03-12-2014

Organization

V.Laskaryov Institute of Semiconductor Physics NAS of Ukraine

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Based on the reversible and transient photoinduced changes in the structure of layers of chalcogenide glasses a technology of immersion (liquid and solid phase) interference nanolithography for the formation of periodic nanostructures with spatial frequency up to 8000 mm-1 (critical size - less than 100 nm) has been developed. In particular have been designed and manufactured of optical circuits for realization of the developed technological method. Using the results of computer simulation of processes of the exposure and after-exposure processing the exposure values and parameters of photoresist selective etching were optimized. Experimental samples of periodic nanostructures were manufactured and their characteristics were investigated. The main application of the developed technology can be found in the production of optical elements for spectral instruments, optical sensors, polarizers, polarizing filters in integrated optics, etc.

Product Description

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Данько Віктор Андрійович
Жовмір Сергій Сергійович
Луканюк Марія Василівна
Минько Віктор Іванович
Михайловська Катерина Василівна
Сопінський Микола Вікторович
Шепелявий Петро Євгенович

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2020-04-02