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Registration Number

0222U000043, 0121U111036 , R & D reports

Title

Computer design, synthesis and heat transport properties of silicon nanostructures for energy efficient applications

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Head

Kuryliuk Vasyl V., Кандидат фізико-математичних наук

Registration Date

02-01-2022

Organization

Taras Shevchenko National University of Kyiv

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Research object: Silicon multilayered structures of different morphology. Purpose of work: synthesis of multilayered structures of porous slicon and study of thermal transport under temperature annealing. Research methods: electrochemical etching, scanning electron microscopy, infrared spectroscopy, reflection spectroscopy, photothermoacoustic measurements. Multilayer periodic structures of porous silicon were synthesized by the method of electrochemical etching. The anodizing of silicon in the periodic mode with shortterm power outages allowed to creation of homogeneous in-depth structures of arbitrary thickness. Using scanning electron microscopy and reflection spectroscopy, it has been shown that a multilayer porous silicon with sharp planar interfaces between layers is formed. It is established that the presence of interfaces does not affect the process of formation of porous silicon, and for the synthesis of multilayer porous structures, you can use the modes that have been tested to obtain single-layer porous silicon. The thermal conductivity of multilayered structures of porous silicon was investigated experimentally. A decrease in the thermal conductivity of multilayer structures in comparison with monolayer structures of the same porosity was revealed. It is shown that the main reason for the decrease in thermal conductivity is the presence of the ultimate thermal resistance at the interfaces between the porous layers of silicon with different porosity in the multilayer structure. The effect of thermal annealing on the thermal properties of multilayer structures of porous silicon is investigated. It was found that the reduction of thermal diffusion and thermal conductivity coefficients in such structures up to 2 times occurs only during a long annealing process. 

Product Description

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Dubyk Kateryna V.
Semchuk Svyatoslav S.
Chornyy Roman М.
Shevchenko Viktoriya В.

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2022-03-09