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Registration Number

0225U000518, (0123U103149) , R & D reports

Title

Passivation of single-crystal Cd(Zn)Te with diamond-like alpha-C:H:N coatings for X- and gamma-radiation detectors

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Оптимізація технологічних параметрів пасивації детекторного матеріалу CdZnTe

Head

Malyi Yevhen V., Кандидат фізико-математичних наук

Registration Date

13-01-2025

Organization

National Academy of Sciences of Ukraine

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Semiconductor detectors are promising for the registration of various types of radiation and particles. At this, radiation and counting characteristics and their dependence on the intensity and energy of particles and radiation are played an important role. In turn, the radiation characteristics depend on the design and technological parameters of the semiconductor material of the detector. Cadmium zinc telluride (CZT) has shown great promise as a material to be used for the production of X-ray and gamma-ray detectors operating at room temperature and producing current flow under the influence of a gate voltage, upon exposure to high energy radiation The performance of detectors fabricated from CZT is often limited by the leakage current in the devices. Surface passivation is an effective technique for controlling this parameter and its related electronic noise.Diamond-like carbon (DLC) film is an amorphous material that consists of sp2 and sp3 hybridized carbon with structure equivalent to the graphite and to the diamond respectively, and of hydrogen. DLC films have superior properties such as high hardness, IR transparency, low friction coefficient, chemical inertness and gas barrier, and are used widely as coating materials in various industrial fields. In general, DLC films have very strong tolerance for X-ray irradiation Because of its extreme properties DLC films were proposed for a wide variety of electronic applications involving an effective physical passivation material for radiation detectors. Some of these applications are based on the radiation hardness of diamond. By virtue of its bond strengths, DLC should be much more resistant to radiation damage than silicon. We expect that passivation of the CZT crystal surface with DLC films can allow us to obtain Cd(Zn)Te - X/gamma detectors with low leakage current, high energy resolution and stability of the functional characteristics.

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 Semiconductor detectors are promising for recording various types of radiation and particles. An important role is played by radiation and counting characteristics and their dependence on the intensity and energy of particles and radiation. In turn, radiation characteristics depend on the design and technological parameters of the semiconductor material of the detector. Cadmium zinc telluride (CZT) is a promising material for the production of X-ray and gamma detectors that operate at room temperature and produce current under the action of a gate voltage, after exposure to high-energy radiation. The performance of detectors made of CZT is limited by the leakage current of the devices. Passivation of the detector surface is an effective method for controlling this parameter and the associated electronic noise. Diamond-like carbon films (DLC) consist of hybridized sp2 and sp3 carbon (with a graphite/diamond structure) and hydrogen. DLC properties such as high hardness, transparency in the IR range, low coefficient of friction, chemical inertness allow them to be used as passivating, protective and illuminating coatings in various industries from solar energy to medical prosthetics. In addition, diamond-like carbon films are quite tolerant to X-ray irradiation. This property is based on the radiation resistance of diamond and is a consequence of strong bonds in DLC and exceeds the radiation resistance of silicon. We have established that passivation of the surface of CdZnTe single crystals with diamond-like carbon films will allow obtaining CdZnTe X-/gamma detectors with low leakage current, high energy resolution and stability of functional characteristics. The initial detector material CdZnTe was investigated and the electrophysical parameters (in particular, resistance and current-voltage characteristics) of the fabricated samples will be determined and the effect of plasma treatment on the surface of Cd1-хZnхTe single crystals upon deposition

Product Description

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Dmytro P. Stratilat

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2025-01-13