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Information × Registration Number 0100U000905, ( 0200U001767  ) R & D request Title Influence of intermediate capture centers on electrophysical characteristics and gamma-sensitivity of semiconductor detectors based on compounds CdTe-ZnTe. Head Гальчинецький Леонід Павлович, Registration Date 28-03-2000 Organization Scientific and Technological Center for RadiationInstruments Concern "Institute for Single Crystals" National Academy of Sciences UKRAINE popup.description1 popup.nrat_date 2024-12-13 Close
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Influence of intermediate capture centers on electrophysical characteristics and gamma-sensitivity of semiconductor detectors based on compounds CdTe-ZnTe.
Head: Гальчинецький Леонід Павлович. Influence of intermediate capture centers on electrophysical characteristics and gamma-sensitivity of semiconductor detectors based on compounds CdTe-ZnTe.. Scientific and Technological Center for RadiationInstruments Concern "Institute for Single Crystals" National Academy of Sciences UKRAINE. № 0100U000905
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Updated: 2026-03-24


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