1 documents found
Information × Registration Number 0100U004015, R & D request Title The study of the influence of the outward factors on the electrophysical parameters of the Si monocrystals growed by means of electron-beam non-ampule and crucible-free zonal melting. Head Баранський Петро Іванович, Registration Date 08-09-2000 Organization V. Lashkaryov Institute of semiconductor physics popup.description1 popup.nrat_date 2024-12-11 Close
search.res_rk
The study of the influence of the outward factors on the electrophysical parameters of the Si monocrystals growed by means of electron-beam non-ampule and crucible-free zonal melting.
Head: Баранський Петро Іванович. The study of the influence of the outward factors on the electrophysical parameters of the Si monocrystals growed by means of electron-beam non-ampule and crucible-free zonal melting.. V. Lashkaryov Institute of semiconductor physics. № 0100U004015
1 documents found

Updated: 2026-03-22


Роздрукувати цю сторінку