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Information × Registration Number 0103U004861, ( 0204U003008  ) R & D request Title Investigation of the structure and electrophysical properties of Si monocrystals growed by means of the electron-beam floating zone (EBFZ) Head Баранський Петро Іванович, Registration Date 16-10-2003 Organization V. Lashkaryov Institute of semiconductor physics popup.description1 popup.nrat_date 2024-12-11 Close
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Investigation of the structure and electrophysical properties of Si monocrystals growed by means of the electron-beam floating zone (EBFZ)
Head: Баранський Петро Іванович. Investigation of the structure and electrophysical properties of Si monocrystals growed by means of the electron-beam floating zone (EBFZ). V. Lashkaryov Institute of semiconductor physics. № 0103U004861
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Updated: 2026-03-26


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