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Information × Registration Number 0103U006192, R & D request Title Development of technology of growth silicon carbide single erystals by a method Leli. Head Кисельов В.С., Registration Date 24-07-2003 Organization State Enterprise "Special design and technological bureau with experimental production of V.Lashkarev Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine" popup.description1 popup.nrat_date 2024-12-11 Close
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Head: Кисельов В.С.. Development of technology of growth silicon carbide single erystals by a method Leli.. State Enterprise "Special design and technological bureau with experimental production of V.Lashkarev Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine". № 0103U006192
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Updated: 2026-03-21