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Information × Registration Number 0104U009380, R & D request Title Investigation of the structure and electrophysical properties of the silicon monocrystals growed by means of the electron-beam floating zone Head Баранський Петро Іванович, Registration Date 08-01-2004 Organization V. Lashkaryov Institute of semiconductor physics popup.description1 popup.nrat_date 2024-12-11 Close
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Investigation of the structure and electrophysical properties of the silicon monocrystals growed by means of the electron-beam floating zone
Head: Баранський Петро Іванович. Investigation of the structure and electrophysical properties of the silicon monocrystals growed by means of the electron-beam floating zone. V. Lashkaryov Institute of semiconductor physics. № 0104U009380
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Updated: 2026-03-23


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