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Information × Registration Number 0104U010074, R & D request Title Topology development and investigation of the HgCdTe photodiodes parameters, obtained by ion-beam etching. Head Сизов Федір Федорович, Registration Date 04-01-2004 Organization V. Lashkaryov Institute of semiconductor physics popup.description1 popup.nrat_date 2024-12-11 Close
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Topology development and investigation of the HgCdTe photodiodes parameters, obtained by ion-beam etching.
Head: Сизов Федір Федорович. Topology development and investigation of the HgCdTe photodiodes parameters, obtained by ion-beam etching.. V. Lashkaryov Institute of semiconductor physics. № 0104U010074
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Updated: 2026-03-22


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