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Head: Cидоренко Володимир Павлович. 1.Modernization of the existance technological base, for the ensuring of the developpment and manufaturing of the silicon integrated ultrahigh-freqnency structure and circuits. 2.Research, development and introducing of the molecular-beam epitaxy of hetero structure on base of silicon for creation of the ultrahighfreqonency circuit and structure. 3.Research and development of the MOS-hidrid and molecular-beam epitaxy of gallium arsenide and solid solution A3B5, manufacturing the epitaxy structures for ultra high frequency devices..
State Scientific Institution “Institute for Single Crystals” of National Academy of Sciences of Ukraine. № 0105U001626
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Updated: 2026-03-26
