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Information × Registration Number 0106U000171, ( 0206U000281  ) R & D request Title The investigation of the influence of preparation the vacuum chamber for the melting of Si crystals by the floating zone method in the helium stream on the concentration of doped and backround admixtures Head Баранський Петро Іванович, Registration Date 19-01-2006 Organization V. Lashkaryov Institute of semiconductor physics popup.description1 popup.nrat_date 2024-12-11 Close
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The investigation of the influence of preparation the vacuum chamber for the melting of Si crystals by the floating zone method in the helium stream on the concentration of doped and backround admixtures
Head: Баранський Петро Іванович. The investigation of the influence of preparation the vacuum chamber for the melting of Si crystals by the floating zone method in the helium stream on the concentration of doped and backround admixtures. V. Lashkaryov Institute of semiconductor physics. № 0106U000171
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Updated: 2026-03-23


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