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Information × Registration Number 0106U004665, R & D request Title "High temperature high-voltage 4H-SiC p-i-n diodes". Head Болтовець Микола Силович, Registration Date 12-04-2006 Organization State Scientific-Reseach Institute "Orion" popup.description1 popup.nrat_date 2024-12-11 Close
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"High temperature high-voltage 4H-SiC p-i-n diodes".
Head: Болтовець Микола Силович. "High temperature high-voltage 4H-SiC p-i-n diodes".. State Scientific-Reseach Institute "Orion". № 0106U004665
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Updated: 2026-03-22


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