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Information × Registration Number 0107U008180, R & D request Title Investigation and development of manufacturing technology for indium phosphide-based 3 mm-wave Gunn diodes with improved energy characteristics Head Конакова Раїса Василівна, Registration Date 26-09-2007 Organization V. Lashkaryov Institute of semiconductor physics popup.description1 popup.nrat_date 2024-12-10 Close
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Investigation and development of manufacturing technology for indium phosphide-based 3 mm-wave Gunn diodes with improved energy characteristics
Head: Конакова Раїса Василівна. Investigation and development of manufacturing technology for indium phosphide-based 3 mm-wave Gunn diodes with improved energy characteristics. V. Lashkaryov Institute of semiconductor physics. № 0107U008180
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Updated: 2026-03-26


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