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Information × Registration Number 0107U008875, ( 0208U002419  ) R & D request Title Development and production of tensosensitive structures for semiconducting integrated circuits of pressure sensors, capable for operation at ultralow temperatures together with facilities for their testing. Head Мітін Вадим Федорович, Registration Date 29-10-2007 Organization V. Lashkaryov Institute of semiconductor physics popup.description1 popup.nrat_date 2024-12-10 Close
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Development and production of tensosensitive structures for semiconducting integrated circuits of pressure sensors, capable for operation at ultralow temperatures together with facilities for their testing.
Head: Мітін Вадим Федорович. Development and production of tensosensitive structures for semiconducting integrated circuits of pressure sensors, capable for operation at ultralow temperatures together with facilities for their testing.. V. Lashkaryov Institute of semiconductor physics. № 0107U008875
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Updated: 2026-03-24


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