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Information × Registration Number 0109U007211, ( 0210U000265  0210U001843  0210U001844  ) R & D request Title Investigation and development of manufacturing technology for indium phosphide-besed 3 mm-wave Gunn diodes with impruved energy characteristics Head Кудрик Ярослав Ярославович, Registration Date 22-07-2009 Organization V. Lashkaryov Institute of semiconductor physics popup.description1 popup.nrat_date 2024-12-10 Close
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Investigation and development of manufacturing technology for indium phosphide-besed 3 mm-wave Gunn diodes with impruved energy characteristics
Head: Кудрик Ярослав Ярославович. Investigation and development of manufacturing technology for indium phosphide-besed 3 mm-wave Gunn diodes with impruved energy characteristics. V. Lashkaryov Institute of semiconductor physics. № 0109U007211
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Updated: 2026-03-23


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