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Information × Registration Number 0110U006409, ( 0211U006428  0212U001818  ) R & D request Title Studying impurities redistribution and creation of structural defects due to impurities effect during directional crystallization of silicon by the methods of mathematical simulation. Head Ковтун Геннадій Прокопович, Registration Date 23-03-2012 Organization National Science Center "Kharkiv Institute of Physics and Technology" popup.description1 popup.nrat_date 2024-12-10 Close
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Studying impurities redistribution and creation of structural defects due to impurities effect during directional crystallization of silicon by the methods of mathematical simulation.
Head: Ковтун Геннадій Прокопович. Studying impurities redistribution and creation of structural defects due to impurities effect during directional crystallization of silicon by the methods of mathematical simulation.. National Science Center "Kharkiv Institute of Physics and Technology". № 0110U006409
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Updated: 2026-03-21


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