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Information × Registration Number 0111U008636, R & D request Title Development and investigation of characteristics of Ge/GaAs hetero junction diodes with nano dimensional strongly compensated Ge layer. Head Личман Кирило Олексійович, Registration Date 12-09-2011 Organization State Scientific-Reseach Institute "Orion" popup.description1 popup.nrat_date 2024-12-10 Close
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Development and investigation of characteristics of Ge/GaAs hetero junction diodes with nano dimensional strongly compensated Ge layer.
Head: Личман Кирило Олексійович. Development and investigation of characteristics of Ge/GaAs hetero junction diodes with nano dimensional strongly compensated Ge layer.. State Scientific-Reseach Institute "Orion". № 0111U008636
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Updated: 2026-03-26


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