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Information × Registration Number 0112U002844, ( 0213U005117  ) R & D request Title Development of the technology for the obtaining of high-quality sapphire substrates for "silicon-on-sapphire" structures for light guides and other components of microelectronic devices. Creation of a pilot production area and manufacture of substrates from the crystals grown by different methods and meant for large integrated circuits Head Литвинов Леонід Аркадійович, Registration Date 18-04-2012 Organization Institute for single crystals NASU popup.description1 popup.nrat_date 2024-12-10 Close
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Development of the technology for the obtaining of high-quality sapphire substrates for "silicon-on-sapphire" structures for light guides and other components of microelectronic devices. Creation of a pilot production area and manufacture of substrates from the crystals grown by different methods and meant for large integrated circuits
Head: Литвинов Леонід Аркадійович. Development of the technology for the obtaining of high-quality sapphire substrates for "silicon-on-sapphire" structures for light guides and other components of microelectronic devices. Creation of a pilot production area and manufacture of substrates from the crystals grown by different methods and meant for large integrated circuits. Institute for single crystals NASU. № 0112U002844
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Updated: 2026-03-24


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