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Information × Registration Number 0113U001209, ( 0213U006677  ) R & D request Title The development of nanotechnology of Ge structures on basic of GaAs and Si for manufacturing of electronic devices Head Шварц Юрій Михайлович, Registration Date 25-01-2013 Organization V. Lashkaryov Institute of semiconductor physics popup.description1 popup.nrat_date 2024-12-10 Close
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The development of nanotechnology of Ge structures on basic of GaAs and Si for manufacturing of electronic devices
Head: Шварц Юрій Михайлович. The development of nanotechnology of Ge structures on basic of GaAs and Si for manufacturing of electronic devices. V. Lashkaryov Institute of semiconductor physics. № 0113U001209
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Updated: 2026-03-27


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