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Information × Registration Number 0113U005002, ( 0213U004829  ) R & D request Title Development of physico-technological foundations of manufacturing nanotechnologies for highly efficient THz Gunn diodes based on indium phosphide epitaxial structures with built-in "elastic" nanoporous buffer layers Head Конакова Раїса Василівна, Registration Date 24-04-2013 Organization V. Lashkaryov Institute of semiconductor physics popup.description1 popup.nrat_date 2024-12-10 Close
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Development of physico-technological foundations of manufacturing nanotechnologies for highly efficient THz Gunn diodes based on indium phosphide epitaxial structures with built-in "elastic" nanoporous buffer layers
Head: Конакова Раїса Василівна. Development of physico-technological foundations of manufacturing nanotechnologies for highly efficient THz Gunn diodes based on indium phosphide epitaxial structures with built-in "elastic" nanoporous buffer layers. V. Lashkaryov Institute of semiconductor physics. № 0113U005002
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Updated: 2026-03-23


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