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Information × Registration Number 0116U008468, ( 0218U000146  0219U001106  0220U000100  0221U103117  0221U106816  ) R & D request Title Defects of radiation and technological origin and their influence on the properties of semiconductor materials and light-emitting diode structures Head Haidar Halyna P., Доктор фізико-математичних наук Registration Date 20-12-2016 Organization Institute of Nuclear Research of the National Academy of Sciences of Ukraine popup.description1 Revealing the regularities of the influence of defects of radiation and technological origin on the electrophysical, structural and radiating characteristics of semiconductor materials. popup.nrat_date 2024-12-10 Close
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Defects of radiation and technological origin and their influence on the properties of semiconductor materials and light-emitting diode structures
Head: Haidar Halyna P.. Defects of radiation and technological origin and their influence on the properties of semiconductor materials and light-emitting diode structures. Institute of Nuclear Research of the National Academy of Sciences of Ukraine. № 0116U008468
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Updated: 2026-03-26


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