1 documents found
Registration Number

0116U008468, ( 0218U000146  0219U001106  0220U000100  0221U103117  0221U106816  ) R & D request

Title

Defects of radiation and technological origin and their influence on the properties of semiconductor materials and light-emitting diode structures

Head

Haidar Halyna P., Доктор фізико-математичних наук

Registration Date

20-12-2016

Organization

Institute of Nuclear Research of the National Academy of Sciences of Ukraine

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Revealing the regularities of the influence of defects of radiation and technological origin on the electrophysical, structural and radiating characteristics of semiconductor materials.

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2024-12-10

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Defects of radiation and technological origin and their influence on the properties of semiconductor materials and light-emitting diode structures
Head: Haidar Halyna P.. Defects of radiation and technological origin and their influence on the properties of semiconductor materials and light-emitting diode structures. Institute of Nuclear Research of the National Academy of Sciences of Ukraine. № 0116U008468
1 documents found

Updated: 2025-09-01


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