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Information × Registration Number 0117U002910, ( 0217U006519  0217U007015  ) R & D request Title Development of the extreme ultraviolet interference lithography technologies for a fabrication of nanosized plasmonic structures "metallic grating-semiconductor heterostructures" and investigations of the structures as core elements of terahertz radiation sources. Head Коротєєв Вадим Вячеславович, Registration Date 12-05-2017 Organization V. Lashkaryov Institute of semiconductor physics popup.description1 popup.nrat_date 2024-12-10 Close
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Development of the extreme ultraviolet interference lithography technologies for a fabrication of nanosized plasmonic structures "metallic grating-semiconductor heterostructures" and investigations of the structures as core elements of terahertz radiation sources.
Head: Коротєєв Вадим Вячеславович. Development of the extreme ultraviolet interference lithography technologies for a fabrication of nanosized plasmonic structures "metallic grating-semiconductor heterostructures" and investigations of the structures as core elements of terahertz radiation sources.. V. Lashkaryov Institute of semiconductor physics. № 0117U002910
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Updated: 2026-03-27


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