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Information × Registration Number 0119U002966, R & D request Title The creation of layers doped with boron in silicon for the manufacture of p-i-n photodiodes. Research and manufacture of experimental samples of flexible polyimide carriers for the assembly of p-i-n photodiodes. Development of photolithography processes to create p-i-n photodiodes. Research and development of processes of diffusion of phosphorus into silicon to create p-i-n photodiodes. Head Радкевич Олександр Іванович, Registration Date 07-10-2019 Organization State Scientific Institution “Institute for Single Crystals” of National Academy of Sciences of Ukraine popup.description1 popup.nrat_date 2024-12-10 Close
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The creation of layers doped with boron in silicon for the manufacture of p-i-n photodiodes. Research and manufacture of experimental samples of flexible polyimide carriers for the assembly of p-i-n photodiodes. Development of photolithography processes to create p-i-n photodiodes. Research and development of processes of diffusion of phosphorus into silicon to create p-i-n photodiodes.
Head: Радкевич Олександр Іванович. The creation of layers doped with boron in silicon for the manufacture of p-i-n photodiodes. Research and manufacture of experimental samples of flexible polyimide carriers for the assembly of p-i-n photodiodes. Development of photolithography processes to create p-i-n photodiodes. Research and development of processes of diffusion of phosphorus into silicon to create p-i-n photodiodes.. State Scientific Institution “Institute for Single Crystals” of National Academy of Sciences of Ukraine. № 0119U002966
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Updated: 2026-03-27


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