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Information × Registration Number 0121U109519, ( 0222U003107  0223U001618  0224U001155  ) R & D request Title Physical and technological principles of obtaining Cu2 (Zn; Al, Ag) (Sn; In; Ga) S4 films and silicon carbide on porous silicon substrates Head Kidalov Valerii V., Доктор фізико-математичних наук Registration Date 11-03-2021 Organization Dmytro Motornyi Tavria State Agrotechnological University popup.description1 The aim of the project is to create a scientific basis for the controlled synthesis of epitaxial films and nanostructures of broadband semiconductors (A2B6, A3B5, Ga2O3) on a new material of microelectronics SiC nanofilms obtained on porous silicon, as well as the synthesis of quadruple Cu2 (Zn; Al, In; S); Ga) S4, study of physical processes occurring in these materials by different methods of their synthesis, as well as analysis of the influence of impurities, synthesis modes and subsequent technological treatments on the structure, phase transitions and related structural distortions in the material, and creation instrumentation structures of the new generation. popup.nrat_date 2024-12-09 Close