1 documents found
Information × Registration Number 0123U100944, R & D request Title Study of the energy structure of point and complex defects and their effect on electronic processes in promising semiconductor crystals and film materials. Head Hnatenko Yurii P., Доктор фізико-математичних наук Registration Date 08-02-2023 Organization Institute of Physics of National Academy of Sciences of Ukraine popup.description1 The purpose of the work is to carry out complex (structural, optical and photoelectric) studies of the nature and energy structure of point and complex centers, as well as their effect on electronic properties and radiative recombination processes in promising bulk and film materials, including nanostructured semiconductor materials as pure and doped with various impurity atoms, and also the solid solutions. popup.nrat_date 2024-12-09 Close
search.res_rk
Head: Hnatenko Yurii P.. Study of the energy structure of point and complex defects and their effect on electronic processes in promising semiconductor crystals and film materials.. Institute of Physics of National Academy of Sciences of Ukraine. № 0123U100944
1 documents found

Updated: 2026-03-26