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Information × Registration Number 0124U003607, ( 0224U032903  ) R & D request Title Plasmonic light trapping for highly efficient thin films solar cells Head Yevtukh Anatolii A., д.ф.-м.н. Registration Date 29-07-2024 Organization V. Lashkaryov Institute of Semiconductor Physics of National Academy popup.description1 The main goal of this project is the research and development of thin-film photoelectric converters with plasmonic trapping of light by highly doped silicon nanocrystals and metal nanocrystals and the creation of highly efficient and cheap solar cells. The main original ideas and characteristic features of this project are: 1) the use of cheap Al and/or Cu metal nanocrystals instead of Au and Ag traditionally used in plasmonics, which is very important for the large-scale production of solar cells; 2) the use of highly doped silicon nanocrystals to increase the absorption of the infrared part of the solar spectrum due to the realization of localized surface plasmon resonance; 3) the use of SiOx(Si, Me), SixOyNz(Si, Me) nanocomposite films containing silicon and metal nanocrystals in oxide and oxynitride matrices as an anti-reflective light trapping coating, which will provide imultaneous plasmonic and dielectric light capture; 4) use of pulsed laser technologies to prevent blurring of the boundaries of the constituent ultrathin layers of the structures inherent in traditional isothermal annealing. popup.nrat_date 2024-12-09 Close