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Information × Registration Number 0125U002940, ( 0226U002651  ) R & D request Title Study of the effect of ionizing radiation on the optical and electrophysical parameters of silicon-based micropixel avalanche photodiodes Head Stratilat Dmytro P., Доктор філософії Registration Date 09-07-2025 Organization Institute of Nuclear Research of the National Academy of Sciences of Ukraine popup.description1 The purpose of the planned research is to establish the patterns of the influence of ionizing radiation on the optical (spectral) and electrophysical characteristics of micropixel photodiodes in order to assess their radiation resistance and determine optimal design solutions to improve reliability. The research includes obtaining information from serial and experimental samples: irradiation with different types of ionizing radiation: gamma rays, electrons with different dose levels; measurement of current–voltage characteristics, optical characteristics of the initial samples and after irradiation; recording information about changes in spectral sensitivity and noise level. The general research plan includes step-by-step accumulation of the experimental base, comparative analysis of results, statistical data processing, and development of scientifically justified recommendations for improving radiation resistance. The relevance of the research is due to the wide range of applications of micropixel photodiodes in nuclear medicine, spectrometric systems, communication equipment, space and military technology, where their radiation resistance is an important parameter. The expected results will contribute to the development of high-tech technologies, increase the efficiency of sensor systems, expand their functionality under extreme operating conditions, and provide recommendations for manufacturing more resistant samples. popup.nrat_date 2025-07-09 Close