Search academic texts

Information × Registration Number 0200U001277, 0197U004718 , R & D reports Title NONLINEAR BIPOLAR CONCENTRATION EFFECTS IN SEMICONDUCTORS CONDITIONED BY EXCLUSION-ACCUMULATION PHENOMENA OF CHARGE CARRIERS popup.stage_title Head Malyutenko Volodymyr Kos'tyantynovych, Registration Date 02-02-2000 Organization Institute of Semiconductor Physics popup.description2 Theoretical and experimentalbase is created for new generation of infrared sources of middle and far spectral regions, which use exclusion-accumulation phenomena in Ge, Si and narrow-band semiconductor structures with antiblocking junctions. Laboratory specimens of devices are created, which cover the actual spectral ranges of atmosphere transparency. Product Description popup.authors popup.nrat_date 2020-04-03 Close