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Information × Registration Number 0200U001406, 0197U012108 , R & D reports Title The study of semiconducting characteristics of large crystals grown under higher pressure of the inert gas popup.stage_title Head Komar V.K., Registration Date 15-02-2000 Organization Department of Optical and Constructional Crystals of STC <Institute for Single Crystals> popup.description2 Technological equipment for growing ternary system CdZnTe crystals by a vertical Bridgeman method from melt under high pressure inert gas has been developed for the first time in Ukraine. The process of such growth has been studied. Three groups of crystals grown under different thermal conditions have been investigated by the methods of adiabatic laser calorimetry, photo- and thermorelaxational dielectric spectroscopy etc. These investigations confirmed improvement of CZT crystal quality and uniformity of the crystallization front shape. It has been shown that spectrometric quality CZT crystals can be grown using a high pressure growth process under certain thermal conditions. Product Description popup.authors popup.nrat_date 2020-04-03 Close