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Information × Registration Number 0200U003030, 0100U000178 , R & D reports Title Complex investigation of the admixtural-defects states in covalent semiconductors popup.stage_title Head Tsmots' V.M., Registration Date 04-02-2000 Organization Drohobych Ivan Franko State Pedagogical University popup.description2 The research technique of phase's transition in models of spin nets is advanced. The hypothesis is justified, that propellented particles in silicon are the neutral or ionization molecules SiO2 or their fragments. The investigation of polycrystals of a system Si-Ni has shown, that alloys of a system Si-Ni rich on silicon (in a label Si2xNi1-x, at х > 0,667) after alloyages have shallowly disperse structure, that is characteristic for a cast material, that toes result in to formation of considerable quantity of flaws of structure. Set, that in conditions of enrichment by silicon the formula of silicide to nickel is closer to NiSi2 than to Ni1,04Si1,93. The theoretical physic. Product Description popup.authors popup.nrat_date 2020-04-03 Close
R & D report
Head: Tsmots' V.M.. Complex investigation of the admixtural-defects states in covalent semiconductors. (popup.stage: ). Drohobych Ivan Franko State Pedagogical University. № 0200U003030
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Updated: 2026-03-22