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Information × Registration Number 0200U003208, 0199U003434 , R & D reports Title Development of mathematical models of optoelectronic very high frequency elements on the basis of arsenide gallic transistors and ways of digital processing of high-frequency signals. popup.stage_title Head Osadchuk Volodymyr Stepanovych, Registration Date 27-03-2000 Organization Vinnitsa State Technical University popup.description2 In work the mathematical models an optoelectronic very high frequency of elements on a basis an arsenide-gallic field-effect transistors with a barrier the Schottky are developed, in which the physical phenomena are taken into account at an irradiation gate of MESFET, when the power photons is less for width of a forbidden region of a semiconductor. It reduces in appearance of photovoltaic effect on gate a barrier. The photoinduced in this case voltage will be stimulated by a photoemission of electrons from metal in gate of semiconductor. Product Description popup.authors popup.nrat_date 2020-04-03 Close