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Information × Registration Number 0200U003581, 0197U002513 , R & D reports Title Experimental and theoretical studies of the mechanism of a secondary ion emission of materials with different electron structures popup.stage_title Head Koval' A.G., Registration Date 08-06-2000 Organization Kharkov National University named after V.N. Karazin popup.description2 Objects of the investigations were materials with different electron structures. The energy distributions of characteristic secondary ions emitted from a surface of materials, differed by the electron structure (GaN, GaP, GaAs, Ge, Ag) at a bombardment by Ar ion beam were studied. The influence of oxygen pressure and sample temperature on energy distributions have been investigated. The adsorption, competitive and reducing processes were investigated at O2, H2 adsorption on a F3D5 group semiconductors surface; the information on oxygen adsorption on Ge and Ni have been studied. The qualitative and quantitative information on adsorption processes was obtained: the kinetics of adsorption-desorption processes was investigated; the temperature influence on these processes was clarified; the sticking coefficients were metered; the conclusions about the mechanism of an oxygen adsorption on A3B5 materials were made. Within framework of electron-exchanging model a final charging state of a atomic particle whic h is flying away from a surface of the narrow-bandgap semiconductor have been theoretically analysed. The expression for dependence of exit probability of an single positively ionised particle from its velocity was derived.The new information about accumulation, holding and thermal gasrelease of the implanted ions of deuterium, helium and nitrogen in samples Ta, W, Be, Zr, in a vanadium alloy, Si and graphite MPG-8 were obtained under conditions, closed to operational in reactors of synthesis. The mechanisms both deuterium and helium gas trapping and release has been offered. Product Description popup.authors popup.nrat_date 2020-04-03 Close