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Information × Registration Number 0200U004007, 0197U018082 , R & D reports Title Physical and Technological Studies of Formation with Ion-Plasma Technologies of Amorphous and Structurized Thin Film Phosphors based on Oxides and Nitrides, their Properties and Applications. popup.stage_title Head Bondar Vyacheslav Dmytrovych, Registration Date 13-06-2000 Organization Ivan Franko National University of Lviv popup.description2 Physical and technological basis for creation of thin film phosphors based on single and complex oxides as well as barrier layers has been developed. The synthesis conditions needed for formation of thin films phosphors of amorphous, nano- (micro-) or near monocrystalline structure has been determined. The electrical properties of thin film oxide phosphors with increased conductivity were investigated. The kinetics of crystallization of amorphous films as well as crystal structure parameters of microstructurized thin film phosphors were studied. The luminescence mechanisms in oxide film systems in relationship with the nature of emission centers and luminescence efficiency of Eu, Mn, Ti and Cr impurities have been determined. The technological conditions of synthesis, structure parameters, electrical and optical properties of monocrystalline thin films of gallium nitride which is the material of strategic importance for opto- and microelectronics have been studied. The efficient luminescent thin films for field emission display applications has been developed. Product Description popup.authors popup.nrat_date 2020-04-03 Close