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Information × Registration Number 0200U004717, 0198U003041 , R & D reports Title Investigation of physical properties and phase compositions of solid state silicon structures popup.stage_title Head Levinzon D.I., Registration Date 01-11-2000 Organization Zaporozhye State Engineer Academy popup.description2 Parameters the porous films: density 1,3-2,0 g/cm3,porosity 109-1011 cm-2,thicknes up to 2mkm, diameter of pores up to 400A. Density of the structure epitaxial defects 101 cm-2, width of transitional episolar cells are 18%, short current 34 mA/cm2, voltage idling 560 mV. Product Description popup.authors popup.nrat_date 2020-04-03 Close