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Information × Registration Number 0201U001061, 0100U006653 , R & D reports Title Measurements of luminescent characteristics of silicon structures and computer processing of results popup.stage_title Head Markov O.S., Registration Date 13-01-2001 Organization Scientific commercial enterprise "Poisk" popup.description2 The effect of anodization regimes on photoluminescent properties of porous layers was investigated. The dependence of PL peak position on anodization regimes as well as excitation light wavelength was established. It was shown that PLE spectrum consists of several bands (ultraviolet and visible). The ratio of these bands' intensities determine the shape of PLE spectrum. The increase of anodization time leads to the increase of PL intensity as well as visible PLE band one. It was shown the rise of current density results to the drop of PL intensity, that don't accompanied by the increase of dangling bond number, as well as to the rise of relative contribution of ultraviolet bands in PLE spectrum. It was established that temperature dependence of PL and PLE spectra is due to presence of different excitation channels. The one of them is light absorption by species adsorbed on Si crystallites. It was observed the decrease of PL intensity under this excitation during cooling due to deceleration of process of energy tranfer from adsorbed species to emmiting center. Under another channel excitation the increase of PL intensity during cooling was found. Product Description popup.authors popup.nrat_date 2020-04-03 Close