Search academic texts

Information × Registration Number 0201U001083, 0100U006652 , R & D reports Title Technology elaboration of obtaining of photoelectric cells on the basis of multilayer heterostructures. popup.stage_title Head Markov O.S., Registration Date 15-01-2001 Organization Scientific commercial enterprise "Poisk" popup.description2 Investigated object - GaInP/GaAs heterostructures. Project goal - technology elaboration of optimal growth procedure of GaInP/GaAs heterostructures for high-efficient tandem solar cells. Methods of investigation - measurement of photoluminescence (PL), reflective high-energy electron diffraction , composition analysis by thickness fringe-transmission electron microscopy. The optimal growth procedure of GaInP/GaAs heterointerface by molecular- beam epitaxy has been investigated. The interface quality is critical factor for obtaining high-efficient GaAs solar cells with a GaInP barrier layer because minority carrier lifetime depends strongly on the interface structure. Reflective High-Energy Electron Diffraction observation during the growth across the GaInP/GaAs heterointerface shown that the phosphorus atoms are replaced by arsenic atoms in the near-interface region of the GaInP layer, and a transient layer acting as a carrier trap is formed. Introduction of a GaP layer into the interface was fou nd to be effective in reducing carrier loss. This layer is preferable for improving optical properties of the GaInP/GaAs heterointerface as well. From composition analysis by thickness fringe-transmission electron microscopy images, it was also found that the optimum thickness of inserted GaP layer to suppress the generation of misfit dislocations as well as the formation of a low-band-gap transition layer was found to be 1 nm. Proposals for application of studied object - using for the creation of radiation-proof high-efficient tandem solar cells. Product Description popup.authors popup.nrat_date 2020-04-03 Close