Search academic texts

Information × Registration Number 0201U003665, 0100U003364 , R & D reports Title Investigation of effects interacting accelerated particles with layered structures based on semiconductors popup.stage_title Head Pelikhatyj M., Registration Date 03-04-2001 Organization Kharkov National University named after V.N. Karazin popup.description2 Objects of research: silicon, indium antimonide, silicon oxide, transitional layer between the metal and dielectric material; territory, analysis technology for territory radiation condition, radiation monitoring of a territory. Purpose of researches is determination of physical regularities for forming of transitional layer in interactive of materials with low energy plasma streams and forming of vertical slots in semiconductors at interactive wits stream of high-energy electrons. Also it is determination of functional tasks for radiation monitoring of territory and there intercommunications, and determination of place for radiation monitoring system and in management system for territory. Also it is determination of parameters for radiation state and radiation situation of territory. It is elaboration of complex of outstripping control and prognostics for territory radiation state. Methods pof researches are method of irradiation of semiconductors by electrons with pulverising of groove material and experimental methods of optical and electron microscopy for research of transitional layer between the metal and dielectric; methods of system analysis, computering diagnostics and geoinformative, mathematical and imitation modelling. There is research for interactive between streams of boron ions and silicon. The experimental researches for interactive of metal plasma streams with wide class of dielectric materials permit to form the parameters of transitional layers as result of physical chemical processes. That secure high adgezical characteristics for the coverings. There is determined the list of function tasks of radiation monitoring. It is researched possible source for radiation pollution of environment and types of pollution and the list of need measures for determination of them. There are worked out methods for determination of integral criterions for radiation state territory estimation. It is elaborated the generalised model for radiation monitoring of territory. Received results create objective base for successful fulfilment of following stage. It is planned on fioolowing stage: to work out experimental researches for optimisation of technological process for integral schemes making based on forming of diffusion profile with creating of dielectric layer of silicon oxide. In will secure the forming of homogeneous p-n transition for raise of good structure coefficient. It is planned to work out new models of radiation for integrated processing for results of different types measuring. The structure of information securing for environment radiation monitoring systems. Product Description popup.authors popup.nrat_date 2020-04-02 Close