Search academic texts

Information × Registration Number 0201U003799, 0100U003337 , R & D reports Title Contact phenomena in structures on the basis of A3B5 semiconductors composite connections popup.stage_title Head Arkusha Yu.V., Registration Date 26-04-2001 Organization Kharkov National University named after V.N.Karazin popup.description2 The object of research - Gunn diodes with two active regions and metal cathode. The purpose of work - study of the basic physical processes, reception current -voltage, power and frequency of the characteristics of Gunn diodes. Method of research - mathematical modeling of work of the Gunn diode on the basis of two-temperature model. The basic results: in the diode with antiblocking m-n by contact are transit dipole domains only in n:In(0.4)Ga(0,6)As of region. In the diode with antiblocking m-n by contact are transit dipole domains only in n::In(0.4)Ga(0,6)As and simultaneously in two areas. The structure InP(1-x)As(x) influences the characteristics of all diode. The output characteristics of the diode with L1=L2=2,5 mm, blocking by the metal cathode and x=0.3 in InP(1-x)As(x) grow out of complex interaction of physical processes occurring simultaneously in two region. A peak efficiency of generation - ~ 13,5% ( ~50 GHz). The maximal output flow power -~15,5 kW/cm2(~55 GHz). Width frequency of a range - ~ 53 GHz (~30...~83GHz). The similar diode, but with antiblocking by the metal cathode has the maximal efficiency of generation ~ 3% and output flow power of ~3.5 kW/cm2 at frequency ~ 40 GHz. . Width frequency of a range - ~ 30GHz (~30...~60 GHz). Product Description popup.authors popup.nrat_date 2020-04-02 Close