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Information × Registration Number 0201U004401, 0100U006654 , R & D reports Title Modelling, developing and investigation of quantum silicon structures. popup.stage_title Head Torchyns'ka T.V., Registration Date 22-03-2001 Organization Institute of Semiconductor Physics popup.description2 The goal of project is clearing up of influence of preparation technique on luminescent, chemical and structural properties of structure Si/SiO2 and porous silicon as well as temperature behavior of their luminescent characteristics. Research techniques - measuring of photoluminescence (PL) and photoluminescence excitation (PLE) spectra at different temperatures, infrared absorption (IR) spectra, scanning electron microscopy and atomic force microscopy, Raman scattering method. Based on investigation of PL, PLE and IR spectra of silicon quantum structures it was shown, that transformation of PLE spectra at variation of preparation regimes and during aging is due to transformation of chemical composition of substances on silicon crystallites' surface.It was shown, that increase of the contribution of ultraviolet bands in PLE spectrum correlates with increase of content of silicon oxide and adsorbed water, while the rise of visible PLE band intensity - with increase of intensity of Si-H vibration band in IR spectrum. Investigation of microstructure of porous silicon layers by SEM and AFM methods as well as Raman scattering spectroscopy was shown, that increase of intensity of scattering light from porous layer in comparison with a one from silicon substrate is due to rise of a internal surface area.It was proposed this effect is taking into account at examination of porous layers by a Raman scattering method. It was established that the behavior of temperature dependence of luminescence band parameters is determined by presence adsorbed molecules on porous layer surface, that take part in photoluminescence excitation process.It was proposed to use of quantum silicon structures for production of light emmiting devices and sensors. Product Description popup.authors popup.nrat_date 2020-04-02 Close