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Information × Registration Number 0201U006245, 0100U000625 , R & D reports Title The theory of forming of brightness field of silicon melting zone (electron-beam crucible-less zoned melting) popup.stage_title Head Poryev Volodymyr Andrijovych, Registration Date 17-12-2001 Organization Research Institute of Applied Electronics of Natoinal Technical University of Ukraine "KPI" popup.description2 The research object - field of brightness of a silicon's melting zone. The purpose of work - development the research methodology. The method of research - theoretical analysis and experiments. The theory of brightness field of meting zone are developed. The experimental graph of temperature distributions on a surface of a melting zone are received for the first time. Designated area of application are electron-beam crucible-less zoned melting of silicon. Product Description popup.authors popup.nrat_date 2020-04-02 Close