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Information × Registration Number 0203U000018, 0100U000113 , R & D reports Title Radiospectroscopy and optical-magnetic study of semiconducting and dielectric materials being perspective for optoelectronics and quantum electronics. popup.stage_title Head Ishchenko Stavislav Stepanovich, Registration Date 08-01-2003 Organization Institute of Semiconductor Physics popup.description2 The objects studied are silicon carbide, diamond-like carbon films, silicon and Si-based structures, biominerals, high-conductive solid solutions, synthetic diamond powders, nano-porous carbon, boron carbide. The purpose of the study is to elucidate the origin, structure and parameters of defects in semiconducting and dielectric materials utilizing in modern electronics. The methods of the study are EPR, spin-relaxation measurements,optics, quantum chemistry calculations. The objects under study are dangling bonds, vacancies and impurity centers. Based on experimental EPR investigation and theoretical analysis both the models of defects and parameters characterized their interaction and relaxation are determined. The influence of ion implantation and sample annealing as well as size effect are studied. The hyperfine structure of the EPR spectra and an effect of drastic increase of center spin-relaxation rate under photoecxited carriers are explained. First-principal calculations of defect parametersare performed. As shown it is possible to form materials with forecast qualities by creation of the determined centers. Product Description popup.authors popup.nrat_date 2020-04-02 Close