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Information × Registration Number 0203U006249, 0100U005118 , R & D reports Title Radiation damage of binary semiconductors and high resistivity detector silicon with different nature of defects. popup.stage_title Head Litovchenko Piotr, Registration Date 11-04-2003 Organization Institute For Nuclear Research Of National Academy Of Sciences Of Ukraine popup.description2 It was shown that the previous irradiation of silicon by neutrons with the following annealing results in creation of sinks for initial radiation defects. Acceleration of oxygen precipitation is defined by overall concentration of radiation point defects. The radiation hardness of neutron transmutation doped silicon raises in 10 and 2 times to gamma and neutron irradiation due to such sinks. Product Description popup.authors popup.nrat_date 2020-04-02 Close