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Information × Registration Number 0203U006547, 0100U001541 , R & D reports Title Investidation of radiation effects at the insulator-semiconductor interface popup.stage_title Head Kulinich Oleg Anatol'ovych, Registration Date 06-06-2003 Organization Training, Scientific-Investigation and Production Centre, associated with the Mechnikov State University of Odessa popup.description2 The structures of dielectric-semiconductor before and after ionization are subject of nvestigation.An investigation of the mechanism of radiation effects on the silicon's surface. And at the oxide-silicon interface are purpose of the work. At the first a model of arise induced-radiation charges at the oxide-silicon structures with consideration real interface and main radiation-depend parameters depend on structural and admixtural composition has been offer.5635 Product Description popup.authors popup.nrat_date 2020-04-02 Close