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Information × Registration Number 0203U008248, 0100U005494 , R & D reports Title "Scientific bases for obtaining technology and study of physical properties of the bulk and film structures on the base of AIIBVI, AIVBVI, complex materials for development of optoelectronic and dosemetrie, devices. popup.stage_title Head Gorley P.N., Registration Date 19-06-2003 Organization Yuri Fedkovych Chernivtsi National University popup.description2 The Research is devoted to study of the wide-gap AIIBVI and AIVBVI doped semiconductors and their solid solutions. As dopants Ge, Sn, Pb, V, Fe, Mn, Cl, Cd, Eu, Dy elements have Seen used. Different growth techniques have been applied to obtain single crystals, thin films and heterostructures. It was found preulirities of influence of different factors (type of dopent, thermal onnealing) on properties and parameters of the studied materials. The largest enhancement of the Farodoy rotations near the fundamental olsorption edge has seen found for the case of CdTe doped with Dy. Similarly to the case of Mn dopent it is explained by strong spin exchange interaction between carriers and magnetic ions. Product Description popup.authors popup.nrat_date 2020-04-02 Close