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Information × Registration Number 0204U000285, 0100U004220 , R & D reports Title The elaboration of physical-tehnological basics for creation of photosensitive nanostructures in the system of A2B6, A3B5, A4B6 popup.stage_title Head Sizov F.F., Registration Date 28-01-2004 Organization Institute of Semiconductor Physics popup.description2 As a result the elaboration of technology, structures and making FPA on the basis of multilager structures and nanolayers and superlattices А2В6, А3В5, А4В6 were did, the researches of there structure, electric, fotoelectric characteristic, mechanismes of current transport and noises were made, the threshold characteristices of FPA were optimized with there using with the readoutes in the cold zone56355635 Product Description popup.authors popup.nrat_date 2020-04-02 Close