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Information × Registration Number 0204U003728, 0104U000327 , R & D reports Title Development of a technique of a sedimentation of oxide films on dielectric and semiconducting substrates and definition of their optical and electrophysical parameters popup.stage_title Head Melnichuk A.V., Registration Date 16-04-2004 Organization Nizhin state pedagogical Gogol University popup.description2 It was developed the technology of sedimentation of transparent hightextured and monocrystal oxide films ZnO on the "halfinterminable" dialectic and semiconductor interface taking to the account the change of the doped level of interface by methods of resistive and electron-beam evaporation of insulators and semiconductor materi-als, and by methods of surface reflection and surface polaritons it was determinated the optical and electrophysical parameters of the film and substrate. Product Description popup.authors popup.nrat_date 2020-04-02 Close