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Information × Registration Number 0205U000130, 0101U006592 , R & D reports Title Development and promotion of new radiation-modified sensors of irradiation for nuclear energetics. popup.stage_title Head Kolomoets Volodymyr vasyl'ovych, Registration Date 14-01-2005 Organization V.Lashkaryov Institute of Semiconductor Physics National Academy of Sciences of Ukraine popup.description2 Electrophysical properties of gamma-irradiated neutron transmutation doped (NTD) silicon were investigated. The presence of technological thermodonors (TD-II) was shown and its activation energies was determined (e(1)=78±1.5 meV, e(2)=180 meV). It was shown that NTD n-Si(P) have more radiation resistance to influence of gamma irradiation in comparison with the n-Si(P) doped from the melt. Product Description popup.authors popup.nrat_date 2020-04-02 Close