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Information × Registration Number 0205U004170, 0104U003305 , R & D reports Title Investigation of the influence of impurities in the melt on the growth stability of profiled sapphire popup.stage_title Head Tkachenko Sergey Anatol'evich, Registration Date 03-03-2005 Organization Institute for Single Crystals Scientific and Technology Association "Institute for Single Crystals" National Academy of Sciences of Ukraine popup.description2 The method of concentration of gaseous impurities inside the crystal in the form of closed cavity is proposed and applied. By means of special shaper impurities are concentrated into one large channel using the Stepanov method. The channel size is defined by the quantity of gaseous impurities. The concentration of gaseous impurities is calculated from the crystal area and the channel cross-section. This allows to estimate the raw material quality and to obtain information for analysis of the reaction which proceeds in the melt during the crystal growth. This method may be used for concentration of gaseous impurities in other crystals grown from the melt.5635 Product Description popup.authors popup.nrat_date 2020-04-02 Close