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Information × Registration Number 0205U007140, 0103U000362 , R & D reports Title Magnetic resonance and optical study of defects in semiconductors and dielectrics and nanosized structures popup.stage_title Head Ishchenko Stanislav Stepanovich, Registration Date 22-12-2005 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 The objects studied are silicon carbide, gallium phosphide, boron nitride, zinc sulfide; diamond-like, SiOx and a-SiC:H films, mineralized biological tissues, carbon nanotubes and silicon nanowires, high-conductive solid solutions, nanosized synthetic diamond, nano composite materials Si/Diamond. The purpose of the study is to elucidate the origin, structure and characteristics of paramagnetic defects in semiconductors, dielectrics and nanosized structures. The methods of the study are EPR, ODMR, PL, quantum-chemistry calculation. The objects under study are dangling bonds, vacancies and impurity centers, nanoparticles. Based on experimental study and theoretical analysis both the model of defects and parameters characterized their interaction are determined. The influence of defects on the material properties is clarified. The effect of both the implantation and annealing on defects structures are studied. Sized phenomena are investigated. New phenomena such as superparamagnetism of iron nanoparticlesin carbon nanotubes, influence of defects on nanostructure PL, increase of radiation sensitivity of mineralizad biological tissues, are found and explained. The theoretical calculations of defects are carried out. As shown it is possible to manage materials properties by creation of the determined centers. Product Description popup.authors popup.nrat_date 2020-04-02 Close